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D3SB05 Datasheet, PDF (1/2 Pages) Rugao Dachang Electronics Co., Ltd – Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 800V Forward Current 4 A
Z ibo Seno Electronic Engineering Co., Ltd.
D3SB05 - D3SB100
4.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
· Glass Passivated Die Construction
· High Case Dielectric Strength of 1500VRMS
· Low Reverse Leakage Current
· Surge Overload Rating to 120A Peak
· Ideal for Printed Circuit Board Applications
· Plastic Material - UL Flammability
Classification 94V-0
H
· UL Listed Under Recognized Component Index,
File Number E94661
C
Mechanical Data
· Case: Molded Plastic
E
· Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
· Polarity: Molded on Body
· Mounting: Through Hole for #6 Screw
· Mounting Torque: 5.0 in-lbs Maximum
· Approx. Weight: 4.6 grams
· Marking: Type Number
A
B
_
L
K
J
D
G
P
N
M
R
3S
Dim Min Max
A 24.80 25.20
B 14.70 15.30
C
4.00 Nominal
D 17.20 17.80
E
0.90 1.10
G
7.30 7.70
H 3.10 Æ 3.40 Æ
J
3.30 3.70
K
1.50 1.90
L
9.30 9.70
M
2.50 2.90
N
3.40 3.80
P
4.40 4.80
R
0.60 0.80
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
RMS Reverse Voltage
VR(RMS)
Average Rectified Output Current
@ TC = 115°C IO
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
IFSM
(JEDEC method)
Forward Voltage per element
@ IF = 2.0A VFM
Peak Reverse Current
at Rated DC Blocking Voltage
@TC = 25°C
@ TC = 125°C
IRM
Typical Junction Capacitance per Element (Note 1)
Cj
Typical Thermal Resistance (Note 2)
RqJC
Operating and Storage Temperature Range
Tj, TSTG
D3SB
05
50
35
D3SB
10
100
70
D3SB D3SB
20
40
D3SB
60
200 400 600
140 280 420
4.0
120
1.0
5.0
500
40
5.5
-65 to +150
D3SB
80
800
560
D3SB
100
Unit
1000 V
700 V
A
A
V
µA
pF
°C/W
°C
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.
D3SB05 - D3SB100
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