D25XB05 Datasheet, PDF (1/2 Pages) Zibo Seno Electronic Engineering Co.,Ltd – 25A GLASS PASSIVATED BRIDGE RECTIFIER

Z ibo Seno Electronic Engineering Co., Ltd.
D25XB05-D25XB100
Features
· Glass Passivated Die Construction
· High Case Dielectric Strength of 1500VRMS
· Low Reverse Leakage Current
· Surge Overload Rating to 350A Peak
· Ideal for Printed Circuit Board Applications
· Plastic Material - UL Flammability
Classification 94V-0
· Lead Free Finish/RoHS Complian
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
· Polarity: Molded on Body
· Mounting: Through Hole for #6 Screw
· Mounting Torque: 5.0 in-lbs Maximum
· Weight: 6.6 grams (approx)
· Marking: Type Number
25A GLASS PASSIVATED BRIDGE RECTIFIER
5S
Dim Min Max
A 29.70 30.30
K
A
L
B 19.70 20.30
C 17.00 18.00
M
D
3.80 4.20
B
_
S
E
7.30 7.70
G
9.80 10.20
N
H
2.00 2.40
J
H
D
C
P
I
0.90 1.10
J
2.30 2.70
R
K
3.0 X 45°
I
L
4.40 4.80
M
3.40 3.80
G EE
N
3.10 3.40
P
2.50 2.90
R
0.60 0.80
S 10.80 11.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current
(Note 1)
@ TC = 100°C
Non-Repetitive Peak Forward Surge Current 8.3 ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage (per element)
@ IF = 12.5A
Peak Reverse Current
at Rated DC Blocking Voltage
I²t Rating for Fusing (t < 8.3ms) (Note 1)
@T_C = 25°C
@ T_C = 125°C
Typical Junction Capacitance (per element) (Note 2)
Typical Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
V_R
V_R(RMS)
IO
I_FSM
V_FM
I_R
I²t
C_j
R_qJC
T_j, T_STG
D25XB D25XB
05
10
50
100
35
70
D25XB D25XB D25XB D25XB
20
20
60
80
200 400 600 800
140 280 420 560
25
350
1.05
10
500
510
85
0.6
-65 to +150
D25XB
100
Unit
1000 V
700 V
A
A
V
µA
A²s
pF
°C/W
°C
Notes:
1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
D25XB05-D25XB100
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