D10XB05 Datasheet, PDF (1/2 Pages) Zibo Seno Electronic Engineering Co.,Ltd – 10A GLASS PASSIVATED BRIDGE RECTIFIER

Z ibo Seno Electronic Engineering Co., Ltd.
D10XB05-D10XB100
Features
· Glass Passivated Die Construction
· High Case Dielectric Strength of 1500VRMS
· Low Reverse Leakage Current
· Surge Overload Rating to 170A Peak
· Ideal for Printed Circuit Board Applications
· Plastic Material - UL Flammability
Classification 94V-0
· Lead Free Finish/RoHS Complian
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
· Polarity: Molded on Body
· Mounting: Through Hole for #6 Screw
· Mounting Torque: 5.0 in-lbs Maximum
· Weight: 6.6 grams (approx.)
· Marking: Type Number
10A GLASS PASSIVATED BRIDGE RECTIFIER
3S
Dim Min Max
A
H
A 24.80 25.20
P
B 14.70 15.30
N
C
4.00 Nominal
D 17.20 17.80
C
_
BL
E
0.90 1.10
G
7.30 7.70
H 3.10 Æ 3.40 Æ
K
E
J
D
M_J
R
K
L
3.30 3.70
1.50 1.90
9.30 9.70
M
2.50 2.90
N
3.40 3.80
G
P
4.40 4.80
R
0.60 0.80
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
D10XB
05
D10XB
10
D10XB D10XB
20
40
D10XB D10XB D10XB
60
80 100
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
100 200 400 600 800 1000 V
V_R
RMS Reverse Voltage
V_R(RMS) 35
70
140 280 420 560 700 V
Average Forward Rectified Output Current
@ T_C= 110°C
IO
10
A
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
IFSM
170
A
(JEDEC method)
Forward Voltage per element
@ IF = 5.0A V_FM
1.05
V
Peak Reverse Current
at Rated DC Blocking Voltage
@T_C = 25°C
@ T_C = 125°C
I_R
I²t Rating for Fusing (t < 8.3ms) (Note 1)
I²t
10
500
mA
120
A²s
Typical Junction Capacitance per Element (Note 2)
Cj
55
pF
Typical Thermal Resistance, Junction to Case (Note 3)
R_qJC
1.4
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes:
1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.
D10XB05-D10XB100
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