BYV26D Datasheet, PDF (1/2 Pages) General Semiconductor – GLASS PASSIVATED FAST EFFICIENT RECTIFIER

Z ibo Seno Electronic Engineering Co., Ltd.
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
BYV26D – BYV26E
1.0A SUPER FAST RECOVERY RECTIFIER
A
B
A
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version
C
D
DO-41
Dim
Min
Max
A
24.5
—
B
4.06
5.21
C
0.60
0.80
D
2.00
3.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
RMS Reverse Voltage
VR(RMS)
Average Rectified Output Current
(Note 1)
@T_A = 55°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
VFM
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
Reverse Recovery Time (Note 2)
trr
Typical Junction Capacitance (Note 3)
Cj
Typical Thermal Resistance (Note 4)
Operating Temperature Range
R
JA
Tj
Storage Temperature Range
TSTG
BYV26D
800
640
1.0
30
2.5
5.0
150
35
45
100
-65 to +150
-65 to +150
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
4. Thermal resistance from juction to ambient.
BYV26E
1000
700
Unit
V
V
A
A
V
µA
nS
pF
°C/W
°C
°C
BYV26D – BYV26E
1 of 2
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