1SS420 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High-Speed Switching Applications

Z ibo Seno Electronic Engineering Co., Ltd.
Silicon Epitaxial Planar Schottky Barrier Diode
for high speed switching application
1SS420
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
*
Top View
Marking Code: "* "
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Peak Forward Current
Power Dissipation
Surge Current (10 ms)
Junction Temperature
Operating Temperature Range
Storage Temperature
Symbol
V_RM
V_R
I_F(AV)
I_FM
P_tot
I_FSM
T_j
T_opr
T_stg
Value
35
30
200
300
150
1
125
- 40 to + 100
- 55 to + 125
Unit
V
V
mA
mA
mW
A
O_C
O_C
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 200 mA
Reverse Current
at V_R = 30 V
Total Capacitance
at V_R = 0 V, f = 1 MHz
Symbol
Typ.
Max.
Unit
V_F
-
0.6
V
I_R
-
5
µA
C_T
20
-
pF
1SS420
1 of 3
www.senocn.com