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1SS400G Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – High Speed SWITCHING Diodes
Z ibo Seno Electronic Engineering Co., Ltd.
Silicon Epitaxial Planar Switching Diode
for high speed switching application
Features
• Ultra small surface mounting type
• High reliability
1SS400G
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
*
Top View
Marking Code: "* "
Simplified outline SOD-723 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Peak Forward Current
Non-repetitive Peak Forward Surge Current (at t = 1 s)
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VRM
90
V
VR
80
V
IF(AV)
100
mA
IFM
225
mA
IFSM
500
mA
Tj
150
OC
Tstg
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 80 V
Capacitance Between Terminals
at VR = 0.5 V, f = 1 MHz
Reverse Recovery Time
at VR = 6 V, IF = 10 mA, RL = 100 Ω
Symbol
Max.
Unit
VF
1.2
V
IR
0.1
µA
CT
3
pF
trr
4
ns
1SS400G
1 of 3
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