1N916 Datasheet, PDF (1/2 Pages) Zibo Seno Electronic Engineering Co.,Ltd – Silicon Epitaxial Planar Switching Diode

Z ibo Seno Electronic Engineering Co., Ltd.
Features
• Fast switching speed
• High reliability
1N916 1N916 A 1N916 B
Silicon Epitaxial Planar Switching Diode
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Current
Peak Forward Surge Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_RRM
100
V
I_F(AV)
200
mA
at t = 1 s
1
at t = 1 µs
I_FSM
4
A
P_tot
500
mW
T_j
175
O_C
T_stg
- 65 to + 200
O_C
Characteristics at T_a = 25 ^OC
Parameter
Reverse Breakdown Voltage
at I_R = 100 µA
at I_R = 5 µA
Reverse Current
at V_R = 20 V
at V_R = 75 V
at V_R = 20 V, T_j = 150 ^OC
Forward Voltage
at I_F = 5 mA
at I_F = 10 mA
at I_F = 20 mA
at I_F = 30 mA
Total Capacitance
at V_R = 0, f = 1 MHz
Symbol
Min.
Max.
Unit
V_(BR)R
100
-
75
-
V
I_R
-
25
nA
-
5
µA
-
50
µA
1N916B
V_F
0.63
0.73
V
1N916
V_F
-
1
V
1N916A
V_F
-
1
V
1N916B
V_F
-
1
V
C_T
-
2
pF
Reverse Recovery Time
at I_F = 10 mA, V_R = 6 V (60 mA), I_RR = 1 mA, R_L = 100 Ω
t_rr
-
4
ns
1N916 1N916 A 1N916 B
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