1N914G Datasheet, PDF (1/3 Pages) Zibo Seno Electronic Engineering Co.,Ltd – Silicon Epitaxial Planar Switching Diode

Z ibo Seno Electronic Engineering Co., Ltd.
1N914G
Features
• Fast switching speed
• Ultra-small surface mount package
• For general purpose switching applications
1N914G
Silicon Epitaxial Planar Switching Diode
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
A
Top View
Marking Code: "A"
Simplified outline SOD-723 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
at t = 1 s
at t = 1 μs
Symbol
V_RRM
I_F(AV)
I_FSM
P_tot
R_θJA
T_j
T_stg
Value
100
200
0.5
1
200
625
150
- 55 to + 150
Unit
V
mA
A
mW
O_C/W
O_C
O_C
Electrical Characteristics (T_a = 25 ^OC)
Parameter
Forward Voltage
at I_F = 10 mA
Reverse Breakdown Voltage
at I_R = 5 µA
at I_R = 100 µA
Reverse Current
at V_R = 20 V
at V_R = 75 V
at V_R = 20 V, T_J = 150 ^OC
Total Capacitance
at V_R = 0 V, f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 30 mA, R_L = 100 Ω, I_RR = 3 mA
Symbol
Min.
Max.
Unit
V_F
-
1
V
V_(BR)R
75
-
V
V_(BR)R
100
-
V
I_R
-
-
25
nA
5
µA
-
50
µA
C_tot
-
4
pF
t_rr
-
50
ns
1N914G
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