1N914 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diode

Z ibo Seno Electronic Engineering Co., Ltd.
1N914 1N914A 1N914B
Silicon Epitaxial Planar Switching Diode
Features
• Fast switching speed
• Ultra-small surface mount package
• For general purpose switching applications
Max. 0.5
Max. 1.9
Min. 27.5
Cathode Band
Part No.
XXX Max. 3.9
Min. 27.5
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Non-Repetitive Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
1N914
1N914A / B
Forward Continuous Current
1N914
1N914A / B
Non-Repetitive Peak Forward Surge Current at t = 1 s
1N914 at t = 1 µs
1N914A / B at t = 1 µs
Power Dissipation
Operating and Storage Temperature Range
Symbol
V_RM
V_R
I_F(AV)
I_FM
I_FSM
P_tot
T_j ,T_stg
Glass Case DO-35
Dimensions in mm
Value
Unit
100
V
75
V
75
200
mA
150
300
mA
1
1
A
4
500
mW
- 65 to + 175
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at I_F = 5 mA
at I_F = 100 mA
at I_F = 10 mA
at I_F = 20 mA
Reverse Current
at V_R = 20 V
at V_R = 75 V
at V_R = 20 V, T_j = 150 ^OC
1N914B
0.62
0.72
1N914B
V_F
-
1
V
1N914
-
1
1N914A
-
1
I_R
-
25
nA
-
5
µA
-
50
µA
Diode Capacitance
at V_R = 0, f = 1 MHz
C_j
-
4
pF
Reverse Recovery Time
at I_F = 10 mA to I_R = 1 mA, V_R = 6 V, R_L = 100 Ω
t_rr
-
4
ns
1N914 1N914A 1N914B
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