1N5817WB Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – 1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Z ibo Seno Electronic Engineering Co., Ltd.
1N5817 WB-1N5819WB
1 A Surface Mount Schottky Barrier Diode
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
**
Top View
Marking Code: * *
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Reverse Voltage
Average Forward Rectified Current
1N5817WB
1N5818WB
1N5819WB
Non-Repetitive Peak Forward Surge Current
(8.3 ms Single Half Sine-Wave)
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Symbol
V_R
I_F(AV)
I_FSM
P_tot
T_j
T_stg
Value
20
30
40
1
9
450
- 55 to + 125
- 55 to + 125
Characteristics at T_a = 25 ^OC
Parameter
Reverse Breakdown Voltage
at I_R = 1 mA
Forward Voltage
at I_F = 0.1 A
at I_F = 1 A
at I_F = 3 A
Reverse Current
at V_R = 20 V
at V_R = 30 V
at V_R = 40 V
at V_R = 4 V
at V_R = 6 V
Total Capacitance
at V_R = 4 V, f = 1 MHz
Symbol
Min.
1N5817WB
1N5818WB
V_(BR)R
20
30
1N5819WB
40
1N5819WB
-
1N5817WB
-
1N5818WB
-
1N5819WB
V_F
-
1N5817WB
-
1N5818WB
-
1N5819WB
-
1N5817WB
-
1N5818WB
1N5819WB
I_R
-
-
1N5819WB
-
1N5819WB
-
C_tot
-
Max.
-
-
-
0.45
0.45
0.55
0.6
0.75
0.875
0.9
1
1
1
0.05
0.075
120
Unit
V
A
A
mW
O_C
O_C
Unit
V
V
mA
pF
1N5817 WB-1N5819WB
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