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1N5400G Datasheet, PDF (1/2 Pages) Rectron Semiconductor – GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
Z ibo Seno Electronic Engineering Co., Ltd.
Features
! Glass Passivated Die Construction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
1N5400G – 1N5408G
3.0A GLASS PASSIV ATED RECTIFIER
A
B
A
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Epoxy: UL 94V-O rate flame retardant
! Lead Free: For RoHS / Lead Free Version
C
D
DO-201AD
Dim
Min
Max
A
245.45
—
B
87.520
9.50
C
1.210
1.30
D
55..000
5.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
1N
1N
1N
1N
1N
1N
1N
5400G 5401G 5402G 5404G 5406G 5407G 5408G
50
100 200 400 600 800 1000
Unit
V
RMS Reverse Voltage
VR(RMS)
35
70
140 280 420 560 700
V
Average Rectified Output Current
(Note 1)
@TA = 75°C
IO
3.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
125
A
rated load (JEDEC Method)
Forward Voltage
@IF = 3.0A
VFM
1.0
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
IRM
5.0
100
µA
Typical Junction Capacitance (Note 2)
Cj
50
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
RJA
18
K/W
Operating Temperature Range
Tj
-55 to +150
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1N5400G – 1N5408G
1 of 2
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