1N4933G Datasheet, PDF (1/2 Pages) Rectron Semiconductor – FAST RECOVERY GLASS PASSIVATED RECTIFIER

Z ibo Seno Electronic Engineering Co., Ltd.
1N4933G – 1N4937G
1.0A GLASS PASSIVATED FAST RECOVERY DIODE
Features
! Diffused Junction
! Low Forward Voltage Drop
! _{High Current Capability}
! High Reliability
! High Surge Current Capability
A
B
A
Mechanical Data
! Case: DO-41, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version
C
D
DO-41
Dim
Min
Max
A
25.4
—
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T_A = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
1N4933 1N4934 1N4935 1N4936 1N4937 Unit
50
100
200
400
600
V
35
70
140
280
420
V
1.0
A
IFSM
VFM
IRM
trr
Cj
Tj
TSTG
30
A
1.2
V
5.0
100
µA
200
nS
15
pF
-65 to +150
°C
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1N4933G – 1N4937G
1 of 2
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