1N4448 Datasheet, PDF (1/3 Pages) Rectron Semiconductor – SIGNAL DIODE

Z ibo Seno Electronic Engineering Co., Ltd.
1N4448/LL4448
Silicon Epitaxial Planar Switching Diode
Applications
• High-speed switching
A
B
A
A
B
This diode is also available in MiniMELF case with
the type designation LL4448.
C
D
DO-35
Dim
Min
Max
A
25.40
—
B
—
4.00
C
—
0.60
D
—
2.00
All Dimensions in mm
C
LL-34/MiniMELF
Dim
MIn
Max
A
3.30
3.70
B
1.30
1.60
C
0.28
0.50
All Dimensions in mm
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
V_RM
100
V
Reverse Voltage
V_R
75
V
Average Rectified Forward Current
I_F(AV)
150
mA
Surge Forward Current at t < 1 s
Power Dissipation
I_FSM
500
mA
P_tot
500 ¹⁾
mW
Junction Temperature
T_j
200
O_C
Storage Temperature Range
T_stg
- 65 to + 200
O_C
1) _{Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.}
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 5 mA
at I_F = 100 mA
Reverse Leakage Current
at V_R = 20 V
at V_R = 75 V
at V_R = 20 V, T_j = 150 ^OC
Reverse Breakdown Voltage
at I_R = 100 µA
Capacitance
at V_R = 0, f = 1 MHz
Reverse Recovery Time
at I_F = 10 mA to I_R = 1 mA, V_R = 6 V, R_L = 100 Ω
Symbol
Min.
Max.
Unit
V_F
0.62
0.72
V
-
1
I_R
-
25
nA
I_R
-
5
µA
I_R
-
50
µA
V_(BR)R
100
-
V
C_tot
-
4
pF
t_rr
-
4
ns
1N4448 / LL4448
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