1N4001W Datasheet, PDF (1/2 Pages) DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD – Surface MountGeneral Purpose Silicon Rectifiers

Z ibo Seno Electronic Engineering Co., Ltd.
1N4001W – 1N4007W
Features
1.0A SURFACE MOUNT GLASS PASSIVATED DIODE
! Glass passivated device
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop, High Efficiency
SOD - 123FL
! Surge Overload Rating to 2 5 A Peak
! Low Power Loss
Cathode Band
Top View
! Ultra-Fast Recovery Time
! Plastic Case Material has UL Flammability
! Classification Rating 94V-O
















































































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Mechanical Data
! Case: SOD-123FL, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.01 grams (approx.)
! Lead Free: For RoHS / Lead Free Version
0.60.25
3.70.2
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Characteristic
Device marking code
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T_L = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Symbol
1N
1N 1N 1N 1N 1N 1N
4001W 4002W 4003W 4004W 4005W 4006W 4007W
A1 A2 A3 A4 A5
A6
A7
UNITS
VRRM
VRWM
VR
50 100 200 400 600 800 1000
V
VR(RMS)
35 70 140 280 420 560 800
V
IO
1.0
A
IFSM
25
A
VFM
IRM
Cj
R
JL
Tj, TSTG
1.3
10
500
15
30
-65 to +150
V
µA
pF
°C/W
°C
Note: 1. Measured with I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm² land area.
1N4001W-1N4007W
1 of 2
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