1A1 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – MINIATURE PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

Z ibo Seno Electronic Engineering Co., Ltd.
1A1 – 1A7
1.0A STANDARD DIODE
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
A
B
A
Mechanical Data
! Case: R-1, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.181 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
C
D
R-1
Dim
Min
Max
A
20.0
—
B
2.90
3.50
C
0.53
0.64
D
2.20
2.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1)
@T_A = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol 1A1 1A2 1A3 1A4 1A5 1A6 1A7 Unit
VRRM
VRWM
VR
50
100 200 400 600 800 1000
V
VR(RMS)
35
70
140 280 420 560 700
V
IO
1.0
A
IFSM
VFM
IRM
Cj
R
JA
Tj
TSTG
30
1.0
5.0
50
15
50
-65 to +125
-65 to +150
A
V
µA
pF
°C/W
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1A1 – 1A7
1 of 2
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