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PMV60EN Datasheet, PDF (3/3 Pages) NXP Semiconductors – UTrenchMOS enhanced logic level FET
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PMV60EN
µTrenchMOS™ enhanced logic level FET
4. Characteristics
Table 3: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 150°C
Tj = −55°C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 2 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 4.5 V; ID = 1.5 A; Figure 7
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 3 A; VDD = 15 V; VGS = 10 V; Figure 13
VGS = 0 V; VDS = 30 V; f = 1 MHz; Figure 11
VDD = 15 V; RL = 15 Ω; VGS = 10 V; RG = 6 Ω
VSD
source-drain (diode forward) voltage IS = 1.5 A; VGS = 0 V; Figure 12
Min Typ Max Unit
30 -
-
V
27 -
-
V
1-
0.6 -
-
-
2V
-
V
2.2 V
-
-
1 µA
-
-
100 µA
-
10 100 nA
-
47 55 mΩ
-
79.9 93.5 mΩ
-
60 72 mΩ
-
9.4 -
nC
-
1.2 -
nC
-
1.9 -
nC
-
350 -
pF
-
70 -
pF
-
50 -
pF
-
5-
ns
-
7-
ns
-
16 -
ns
-
5.5 -
ns
-
0.79 1.2 V
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