CJQ4435 Datasheet, PDF (3/3 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJQ4435
-24 _Ta=25℃
Pulsed
Output Characteristics
V_GS=-3V,-3.5V,-4V,-4.5V
-18
-12
-6
-0
-0
V_GS=-2.5V
V_GS=-2V
-2
-4
-6
-8
-10
DRAIN TO SOURCE VOLTAGE V_DS (V)
80
Ta=25℃
Pulsed
60
R
DS(ON)
——
I
D
40
20
0
-0
-1.6
V_GS=-4.5V
V_GS=-10V
-2
-4
-6
-8
-10
DRAIN CURRENT I_D (A)
Threshold Voltage
-1.5
-1.4
I_D=-250uA
-1.3
-1.2
25
50
75
100
125
JUNCTION TEMPERATURE T_J (℃)
-24
V_DS=-10V
Ta=25℃
Pulsed
-18
Transfer Characteristics
-12
-6
-0
-0
-1
-2
-3
-4
GATE TO SOURCE VOLTAGE V_GS (V)
R
DS(ON)
——
V
GS
80
Ta=25℃
Pulsed
60
40
I_D=-9.1A
20
0
-0
-2
-4
-6
-8
-10
GATE TO SOURCE VOLTAGE V_GS (V)
-2
Ta=25℃
-1 Pulsed
I —— V
S
SD
-0.1
-0.01
-1E-3
-0.2
-0.4
-0.6
-0.8
-1.0
SOURCE TO DRAIN VOLTAGE V_SD (V)
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