CJP04N60 Datasheet, PDF (3/3 Pages) ZP Semiconductor – 6 0 0V N-Channel Power MOSFET

CJP04N60
8
Ta=25℃
Pulsed
6
4
Output Characteristics
6V
5.5V
5V
2
V =4.5V
GS
0
0
10
20
30
40
50
DRAIN TO SOURCE VOLTAGE V (V)
DS
5
Ta=25℃
Pulsed
4
R
DS(ON)
——
I
D
3
VGS= 10V
2
1
0
0
1
2
3
4
DRAIN CURRENT I (A)
D
4
Ta=25℃
Pulsed
1
I
S
——
V
SD
0.1
0.01
1E-3
0.4
0.6
0.8
1.0
1.2
SOURCE TO DRAIN VOLTAGE V (V)
SD
Transfer Characteristics
1.0
Ta=25℃
Pulsed
0.8
0.6
0.4
0.2
0.0
0
2
4
6
8
GATE TO SOURCE VOLTAGE V (V)
GS
R
DS(ON)
——
V
GS
15
Ta=25℃
Pulsed
12
9
6
I =2A
D
3
0
0
2
4
6
8
10
GATE TO SOURCE VOLTAGE V (V)
GS
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