 English |
|
|
|
|
|
|
|
| IRLML6346TRPBF Datasheet, PDF (2/2 Pages) International Rectifier – HEXFETPower MOSFET | |||
| |||
| ◁ |
IRLML6346TRPbF
HEXFET® Power MOSFET
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30 âââ âââ V VGS = 0V, ID = 250μA
ïV(BR)DSS/ïTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
âââ
âââ
âââ
0.02
46
59
âââ
63
80
V/°C
dd mï
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 3.4A
VGS = 2.5V, ID = 2.7A
VGS(th)
Gate Threshold Voltage
0.5 0.8 1.1
V VDS = VGS, ID = 10μA
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0
μA VDS =24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100
nA VGS = 12V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -12V
RG
Internal Gate Resistance
âââ 3.9 âââ ï
gfs
Forward Transconductance
9.5 âââ âââ S VDS = 10V, ID = 3.4A
Qg
Total Gate Charge
âââ 2.9 âââ
ID = 3.4A
Qgs
Qgd
td(on)
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
âââ 0.13 âââ
âââ 1.1 âââ
âââ 3.3 âââ
nC
VDS =15V
d VGS = 4.5V
d VDD =15V
tr
td(off)
Rise Time
Turn-Off Delay Time
âââ 4.0 âââ
âââ 12 âââ
ns ID = 1.0A
RG = 6.8ï
tf
Fall Time
âââ 4.9 âââ
VGS = 4.5V
Ciss
Input Capacitance
âââ 270 âââ
VGS = 0V
Coss
Output Capacitance
âââ 32 âââ pF VDS = 24V
Crss
Reverse Transfer Capacitance
âââ 21 âââ
Æ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ âââ 1.3
âââ âââ 17
âââ âââ 1.2
MOSFET symbol
D
A showing the
integral reverse
G
S
d p-n junction diode.
V TJ = 25°C, IS = 3.4A, VGS = 0V
âââ 8.8
âââ 2.7
13
4.1
d ns TJ = 25°C, VR = 24V, IF=1.3A
nC di/dt = 100A/μs
sales@zpsemi.com
www.zpsemi.com
2 of 2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese