DMP2130L Datasheet, PDF (2/2 Pages) ZP Semiconductor – P-CHANNEL ENHANCEMENT MODE MOSFET

DMP2130L
P-CHANNEL ENHANCEMENT MODE MOSFET
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Continuous
Pulsed Drain Current (Note 6)
Body-Diode Continuous Current (Note 5)
T_A = 25°C
T_A = 70°C
Symbol
V_DSS
V_GSS
I_D
I_DM
I_S
Value
-20
±12
-3.0
-2.4
-15
2.0
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5); Steady-State
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 7)
Symbol Min
BV_DSS
-20
T_J = 25°C
I_DSS
⎯
I_GSS
⎯
V_GS(th)
-0.6
I_{D (ON)}
-15
Static Drain-Source On-Resistance (Note 7)
R_{DS (ON)}
⎯
Typ Max
⎯
⎯
⎯
-1
⎯
±100
⎯
-1.25
⎯
⎯
51
75
87
110
99
125
Forward Transconductance (Note 7)
Diode Forward Voltage (Note 7)
Maximum Body-Diode Continuous Current (Note 5)
DYNAMIC PARAMETERS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
g_FS
⎯
7.3
⎯
V_SD
⎯
0.79 -1.26
I_S
⎯
⎯
1.7
Q_g
⎯
7.3
⎯
Q_gs
⎯
2.0
⎯
Q_gd
⎯
1.9
⎯
t_D(on)
⎯
12
⎯
t_r
⎯
20
⎯
t_D(off)
⎯
38
⎯
t_f
⎯
41
⎯
C_iss
⎯
443
⎯
C_oss
⎯
128
⎯
C_rss
⎯
101
⎯
Notes:
3. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.
4. Repetitive Rating, pulse width limited by junction temperature.
5. Test pulse width t = 300μs.
6. Guaranteed by design. Not subject to production testing.
Unit
Test Condition
V I_D = -250μA, V_GS = 0V
μA V_DS = -20V, V_GS = 0V
nA V_DS = 0V, V_GS = ±12V
V V_DS = V_GS, I_D = -250μA
A V_GS = -4.5V, V_DS = -5V
V_GS = -4.5V, I_D = -3.5A
mΩ V_GS = -2.7V, I_D = -3.0A
V_GS = -2.5V, I_D = -2.6A
S V_DS = -10V, I_D = -3.0A
V I_S = -1.7A, V_GS = 0V
A
⎯
nC V_GS = -4.5V, V_DS = -10V, I_D = -3.0A
nC V_GS = -4.5V, V_DS = -10V, I_D = -3.0A
nC V_GS = -4.5V, V_DS = -10V, I_D = -3.0A
ns
ns V_DS = -10V, V_GS = -4.5V,
ns R_L = 10Ω, R_G = 6Ω
ns
pF
pF
V_DS = -16V, V_GS = 0V
f = 1.0MHz
pF
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