DMG2302U Datasheet, PDF (2/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

DMG2302U
N-CHANNEL ENHANCEMENT MODE MOSFET
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol Min
BV_DSS
20
I_DSS
-
I_GSS
-
V_GS(th)
0.4
Static Drain-Source On-Resistance
R_{DS (ON)}
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Y_fs|
-
V_SD
-
C_iss
-
C_oss
-
C_rss
-
R_g
-
Q_g
-
Q_gs
-
Q_gd
-
t_D(on)
-
t_r
-
t_D(off)
-
t_f
-
Notes:
4. Short duration pulse test used to minimize self-heating effect.
5. Guaranteed by design. Not subject to production testing.
Typ
-
-
-
-
-
13
0.75
594.3
64.5
57.7
1.5
7.0
0.9
1.4
7.4
9.8
28.1
6.7
Max
-
1.0
±100
1.0
90
120
-
1.0
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V
V_GS = 0V, I_D = 10μA
μA V_DS = 20V, V_GS = 0V
nA V_GS = ±8V, V_DS = 0V
V
V_DS = V_GS, I_D = 50μA
mΩ ^{VGS = 4.5V, ID = 3.6A}
V_GS = 2.5V, I_D = 3.1A
S
V_DS = 5V, I_D = 3.6A
V
V_GS = 0V, I_S = 1A
pF
pF
V_DS = 10V, V_GS = 0V,
f = 1.0MHz
pF
Ω V_DS = 0V, V_GS = 0V, f = 1MHz
nC
nC ^{VGS = 4.5V, VDS = 10V,}
nC ^{ID = 3.6A}
ns
ns V_DD = 10V, V_GS = 4.5V,
ns RL = 2.78Ω, RG = 1.0Ω
ns
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