CJU03N80 Datasheet, PDF (2/2 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJU03N80
Electrical characteristics (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
Gate-body leakage current
I_DSS
VDS =800V, VGS =0V
I_GSS
VDS =0V, VGS =±30V
On characteristics
Gate-threshold voltage
VGS(th) VDS =V_GS, ID =250µA
Static drain-source on-resistance
RDS(on) VGS =10V, ID =1.5A
Forward transconductance (note2)
gfs
VDS =15V, ID =1.5A
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
C_iss
C_oss
VDS =25V,VGS =0V,f =1MHz
Reverse transfer capacitance
C_rss
Switching characteristics (note 2,3)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
V_DD=400V, R_G=4.7Ω, ID =3A,
VGS =10V
Turn-off fall time
tf
Total Gate Charge
Gate-Source Charge
Q_g
Q_gs
VDS =640V,VGS =10V,ID =3A
Gate-Drain Charge
Q_gd
Drain-Source Diode Characteristics
Drain-source diode forward voltage
VSD VGS = 0V, IS =3A
Continuous drain-source diode forward
I_S
current
Pulsed drain-source diode forward current
I_SM
Notes :
1. L=35mH, I_L=3A, V_DD=50V, R_G=25Ω,Starting T_J=25℃.
2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3. Guaranteed by design, not subject to production
Min Typ Max Unit
800
V
1
µA
±10 μA
3
4.5
V
4.2
Ω
2.1
S
485
57
pF
11
17
27
ns
36
40
19
nC
3.2
nC
10.8
nC
1.6
V
3
A
10
A
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