CJS8820 Datasheet, PDF (2/3 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJS8820
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =16V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±10V, VDS = 0V
Gate threshold voltage (note 1)
VGS(th) VDS =V_GS, ID =250µA
VGS =10V, ID =7A
VGS =4.5V, ID =6.6A
Drain-source on-resistance (note 1)
RDS(on) VGS =3.8V, ID =6A
VGS =2.5V, ID =5.5A
VGS =1.8V, ID =2A
Forward tranconductance (note 1)
gFS
VDS =5V, ID =7A
Diode forward voltage(note 1)
V_SD
I_S=1A, VGS = 0V
DYNAMIC PARAMETERS (note 2)
Input Capacitance
C_iss
Output Capacitance
C_oss
VDS =10V,VGS =0V,f =1MHz
Reverse Transfer Capacitance
C_rss
Total gate charge
Q_g
Gate-source charge
Gate-drain charge
Q_gs
VDS =10V,VGS =4.5V,ID =6A
Q_gd
SWITCHING PARAMETERS(note 2)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
V_GS=5V,V_DD=10V,
R_L=1.5Ω,R_GEN=3Ω
Turn-off fall time
tf
Notes :
1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%.
2. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
20
V
1
µA
±10 µA
0.5
1.1
V
21
mΩ
24
mΩ
28
mΩ
32
mΩ
50
mΩ
9
S
1
V
650
pF
140
pF
60
pF
8
nC
2.5
nC
3
nC
0.5
ns
1
ns
12
ns
4
ns
[e-mail]
www.zpsemi.com
2 of 3