CJPF08N60 Datasheet, PDF (2/3 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJPF08N60
Electrical characteristics (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Drain-source diode forward voltage(note2)
VSD VGS = 0V, IS =7A
Zero gate voltage drain current
Gate-body leakage curren (note2)
I_DSS
VDS =600V, VGS =0V
I_GSS
VDS =0V, VGS =±30V
On characteristics (note2)
Gate-threshold voltage
VGS(th) VDS =V_GS, ID =250µA
Static drain-source on-resistance
RDS(on) VGS =10V, ID =4A
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
C_iss
C_oss
C_rss
VDS =25V,VGS =0V,f =1MHz
Switching characteristics (note 3)
Turn-on delay time (note3)
td(on)
Turn-on rise time (note3)
Turn-off delay time (note3)
tr
td(off)
V_DD=300V, V_GS=10V,
R_G=25Ω, ID =7A
Turn-off fall time (note3)
tf
Notes :
1. L=7mH, I_L=8A, V_DD=50V, R_G=25Ω,Starting T_J=25℃.
2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3. These parameters have no way to verify.
Min Typ Max Unit
600
V
1.4
1
µA
±100 nA
2.0
4.0
V
1.3
Ω
1280
120 pF
11
80
165
ns
160
120
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