CJP75N75-TO220-3L Datasheet, PDF (2/2 Pages) ZP Semiconductor – N - Channel Power MOSFET

CJP75N75
Electrical characteristics (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Static characteristics
Drain-source breakdown voltage
BVDSS VGS =0, ID =250µA
Gate-threshold voltage (note 1)
Gate-body leakage current
Zero gate voltage drain current
Drain-source on-state resistance (note 1)
VGS(th)
I_GSS
I_DSS
RDS(on)
VDS =V_GS, ID =250µA
VDS =0, VGS =±20V
VDS =75V, VGS =0
VGS =10V, ID =40A
Forward transconductance (note 1)
Dynamic characteristics (note 2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching characteristics (note 2)
Turn-on delay time
Rise time
Turn-off delay time
Fall Time
g_FS
VDS =10V, ID =40A
C_iss
C_oss
C_rss
VDS =25V,VGS =0,f =1MHz
td(on)
tr
td(off)
tf
V_DD=30V, ID=2A,R_L=15Ω,
V_GS=10V,R_G=2.5Ω
Total gate charge
Gate-source charge
Gate-drain charge
Q_g
Q_gs
VDS =30V,VGS =10V,ID =30A
Q_gd
Source-Drain Diode characteristics
Diode forward current
I_S
Diode pulsed forward current
I_SM
Diode Forward voltage (note 1)
V_SD
VGS =0, I_S=40A
Diode reverse recovery time (note 2)
Diode reverse recovery charge (note 2)
t_rr
Q_rr
I_F=75A,di/dt=100A/µs
Notes: 1. Pulse Test: Pulse Width≤300µs, duty cycle ≤2%.
2. These parameters have no way to verify.
Min Typ Max Unit
75
V
2
4
±100 nA
1
µA
8
mΩ
60
S
3100
310
pF
260
18.2
15.6
ns
70.5
13.8
100
18
nC
27
75
A
300
A
1.2
V
33
ns
54
nC
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