CJK2305 Datasheet, PDF (2/3 Pages) ZP Semiconductor – P -Channel 12-V(D-S) MOSFET

CJK2305
Electrical characteristics (T_a=25℃ unless otherwise noted)
Parameter
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
Symbol
V(BR)DSS
VGS(th)
I_GSS
I_DSS
Drain-source on-state resistance(note 1)
RDS(on)
Forward transconductance(note 1)
gfs
Dynamic(note 2)
Input capacitance
C_iss
Output capacitance
C_oss
Reverse transfer capacitance
C_rss
Turn-on delay Time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Drain-source body diode characteristics
Body diode forward voltage(note 1)
V_SD
Notes:
1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.
2. These parameters have no way to verify.
Test Condition
VGS = 0V, ID =-250µA
VDS =V_GS, ID =-250µA
VDS =0V, VGS =±12V
VDS =-12V, VGS =0V
VGS =-4.5V, ID =-3.5A
VGS =-2.5V, ID =-3A
VGS =-1.8V,ID=-2.0A
VDS =-5V, ID =-2.8A
VDS =-8V,VGS =0V,f =1MHz
V_DD=-10V,
R_L=10Ω, ID=-1A,
V_GEN=-4.5V,R_G=6Ω
I_S=-1.25A, VGS = 0V
Min Typ Max Unit
-12
-0.42
8
V
-1.0
±100 nA
-1
µA
0.052
0.070 Ω
0.095
S
1050
190
pF
150
10
23
ns
120
71
-1.3
V
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