CJD04N65A Datasheet, PDF (2/2 Pages) ZP Semiconductor – N -Channel P ower MOSFET

CJD04N65A
Electrical characteristics (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
650
V
Drain-source diode forward voltage(note2)
VSD VGS = 0V, IS =4.0A
1.5
Zero gate voltage drain current
Gate-body leakage curren (note2)
I_DSS
VDS =600V, VGS =0V
I_GSS
VDS =0V, VGS =±30V
25
µA
±100 nA
On characteristics (note2)
Gate-threshold voltage
Static drain-source on-resistance
VGS(th) VDS =V_GS, ID =250µA
2.0
4.0
V
RDS(on) VGS =10V, ID =2.0A
3.0
Ω
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
C_iss
C_oss
C_rss
VDS =25V,VGS =0V,f =1MHz
760
180 pF
20
Switching characteristics (note 3)
Total gate charge
Gate-source charge
Gate-drain charge
Q_g
Q_gs VDS =480V,VGS =10V,ID =4.0A
Q_gd
5.0
10
2.7
nC
2.0
Turn-on delay time (note3)
Turn-on rise time (note3)
Turn-off delay time (note3)
td(on)
tr
td(off)
V_DD=300V, V_GS=10V,
R_G=9.1Ω, ID =4.0A
20
10
ns
40
Turn-off fall time (note3)
tf
20
Notes :
1. L=30mH, I_L=4 A, V_DD=100V, V_GS=10V,R_G=25Ω,Starting T_J=25℃.
2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3. These parameters have no way to verify.
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