XP151A13A0MR Datasheet, PDF (1/2 Pages) Torex Semiconductor – Power MOS FET

XP151A13A0MR-G
Power MOSFET
■GENERAL DESCRIPTION
The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■PIN CONFIGURATION/
MARKING
11 3 x
G：Gate
S：Source
D：Drain
■FEATURES
Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V
: Rds(on) = 0.14Ω@ Vgs = 2.5V
: Rds(on) = 0.25Ω@ Vgs = 1.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 1.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PRODUCT NAMES
PRODUCTS
XP151A13A0MR
XP151A13A0MR-G^(*)
PACKAGE
SOT-23
SOT-23
ORDER UNIT
3,000/Reel
3,000/Reel
(*) _{The “-G” suffix denotes Halogen and Antimony free as well as}
being fully RoHS compliant.
* x represents production lot number.
■EQUIVALENT CIRCUIT
[e-mail]
■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
PARAMETER
SYMBOL RATINGS UNITS
Drain - Source Voltage Vdss
20
V
Gate - Source Voltage
Vgss
±8
V
Drain Current (DC)
Id
1
A
Drain Current (Pulse)
Idp
4
A
Reverse Drain Current
Idr
1
A
Channel Power Dissipation * Pd
0.5
W
Channel Temperature
Tch
150
℃
Storage Temperature
Tstg -55~150 ℃
* When implemented on a ceramic PCB
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