SI2300 Datasheet, PDF (1/6 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – 20 V N-Channel Enhancement Mode MOSFET

SI2300
Feature
 20V/6A, R^DS(ON) = 35mΩ(MAX) @V^GS = 4.5V.
RDS(ON) = 45mΩ(MAX) @VGS = 2.5V.
 Super High dense cell design for extremely low R^{DS(ON) .}
 Reliable and Rugged.
 SC-59 for Surface Mount Package.
N-Channel Enhancement Mode MOSFET
Applications
● LI-ION Protection Circuit
SC-59
SC-59
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
TA=25℃ Unless Otherwise noted
Symbol
VDS
VGS
ID
Electrical Characteristics
TA=25℃ Unless Otherwise noted
Parameter
Symbol
Test Conditions
Off Characteristics
Drain to Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
Zero-Gate Voltage Drain Current
IDSS
VDS=16V, VGS=0V
Gate Body Leakage Current, Forward
IGSSF
VGS=10V, VDS=0V
Gate Body Leakage Current, Reverse
IGSSR
VGS=-10V, VDS=0V
On Characteristics
Gate Threshold Voltage
VGS(th)
VGS= VDS, ID=250µA
Static Drain-source
RDS(ON)
VGS =4.5V, ID =6.0A
On-Resistance
VGS =2.5V, ID =5.2A
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS=1.5A
Limit
20
±10
6
Units
V
V
A
Min Typ. Max Units
20
-
-
V
-
-
1
μA
-
-
100
nA
-
-
-100
nA
0.4
-
1.3
V
-
28
35
mΩ
-
35
45
mΩ
1.2
V
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