PMV65UN Datasheet, PDF (1/4 Pages) ZP Semiconductor – 20 V, single N-channel Trench MOSFET

PMV65UN
20 V, single N-channel Trench MOSFET
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
• Low threshold voltage
• Very fast switching
• Trench MOSFET technology
1.3 Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_amb = 25 °C
V_GS = 4.5 V; T_amb = 25 °C; t ≤ 5 s
V_GS = 4.5 V; I_D = 2 A; T_j = 25 °C
Min Typ Max Unit
-
-
20
V
-8
-
8
V
[1]
-
-
2.2 A
-
64
76
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
[e-mail]
www.zpsemi.com
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