PMV48XP Datasheet, PDF (1/4 Pages) NXP Semiconductors – 20 v, 3.5A P-channel Trench MOSFET

PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
„ Logic-level compatible
„ Trench MOSFET technology
„ Very fast switching
1.3 Applications
„ High-side loadswitch
„ High-speed line driver
„ Relay driver
„ Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source
T_amb = 25 °C
voltage
-
-
-20 V
V_GS
gate-source
voltage
-12 -
12 V
I_D
drain current
Static characteristics
V_GS = -4.5 V; T_amb = 25 °C
[1]
-
-
-3.5 A
R_DSon
drain-source
on-state
resistance
V_GS = -4.5 V; I_D = -2.4 A;
pulsed; t_p ≤ 300 µs; δ ≤ 0.01;
T_j = 25 °C
-
48 55 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
[e-mail]
www.zpsemi.com
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