PMV37EN Datasheet, PDF (1/3 Pages) NXP Semiconductors – 30 V, 3.1 A N-channel Trench MOSFET

PMV37EN
30 V, 3.1 A N-channel Trench MOSFET
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Logic-level compatible
 Very fast switching
 Trench MOSFET technology
1.3 Applications
 Relay driver
 High-speed line driver
 Low-side load switch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = 10 V; T_amb = 25 °C
V_GS = 10 V; I_D = 3.1 A; T_j = 25 °C
Min Typ Max Unit
-
-
30 V
-20 -
20 V
[1]
-
-
3.1 A
-
28
36
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
gate
S
source
D
drain
Simplified outline
3
1
2
SOT23 (TO-236AB)
Graphic symbol
D
G
mbb076 S
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