PMV30XN Datasheet, PDF (1/3 Pages) NXP Semiconductors – 20 V, 3.2 A N-channel Trench MOSFET

PMV30XN
20 V, 3.2 A N-channel Trench MOSFET
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Low threshold voltage
 Very fast switching
 Trench MOSFET technology
1.3 Applications
 Relay driver
 High-speed line driver
 Low-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = 4.5 V; T_amb = 25 °C
V_GS = 4.5 V; I_D = 3.2 A; T_j = 25 °C
Min Typ Max Unit
-
-
20 V
-12 -
12 V
[1]
-
-
3.2 A
-
28
35
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
gate
S
source
D
drain
Simplified outline
3
1
2
SOT23 (TO-236AB)
Graphic symbol
D
G
mbb076 S
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