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NX2301P Datasheet, PDF (1/3 Pages) NXP Semiconductors – 20 V, 2 A P-channel Trench MOSFET | |||
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NX2301P
20 V, 2 A P-channel Trench MOSFET
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
 1.8 V RDSon rated for Low Voltage Gate Drive
 Very fast switching
 Trench MOSFET technology
 AEC-Q101 qualified
1.3 Applications
 Relay driver
 High-speed line driver
 High-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
VGS
ID
RDSon
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C;
VGS = â4.5 V
Tj = 25 °C;
VGS = â4.5 V;
ID = â1 A
-
-
â20 V
-
-
±8
V
[1] -
-
â2
A
[2] -
100 120 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ⤠5 s.
[2] Pulse test: tp ⤠300 μs; δ ⤠0.01.
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