IRLML9301TRPBF Datasheet, PDF (1/2 Pages) International Rectifier – HEXFET Power MOSFET

IRLML9301TRPbF
HEXFET^® Power MOSFET
V_DS
-30
V
V_{GS Max}
± 20
V
G1
R_{DS(on) max}
(@V_GS = -10V)
64
mΩ
R_{DS(on) max}
103 mΩ
S2
(@V_GS = -4.5V)
3D
Micro3^TM (SOT-23)
IRLML9301TRPbF
Application(s)
• System/Load Switch
Features and Benefits
Features
Low R_DS(on) ( ≤ 64mΩ)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Benefits
Lower switching losses
Multi-vendor compatibility
results in Easier manufacturing
⇒ Environmentally friendly
Increased reliability
Symbol
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
R_θJA
R_θJA
Parameter
e Junction-to-Ambient
f Junction-to-Ambient (t<10s)
Max.
-30
-3.6
-2.9
-15
1.3
0.8
0.01
± 20
-55 to + 150
Typ.
–––
–––
Max.
100
99
Units
V
A
W
W/°C
V
°C
Units
°C/W
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