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IRFML8244TRPBF Datasheet, PDF (1/2 Pages) International Rectifier – HEXFETPower MOSFET | |||
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IRFML8244TRPbF
HEXFET® Power MOSFET
VDS
25
V
VGS Max
± 20
V
*
RDS(on) max
(@VGS = 10V)
24
mï
RDS(on) max
(@VGS = 4.5V)
41
mï
6
'
Micro3TM (SOT-23)
IRFML8244TRPbF
Application(s)
ï·ï Load/ System Switch
Features and Benefits
Features
Low RDS(on) ( ï£ 24mï)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
PD @TA = 70°C
Maximum Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance
Symbol
Rï±JA
Rï±JA
Parameter
e Junction-to-Ambient
f Junction-to-Ambient (t<10s)
Benefits
Lower switching losses
Multi-vendor compatibility
results in Easier manufacturing
ï Environmentally friendly
Increased reliability
Max.
25
5.8
4.6
24
1.25
0.80
0.01
± 20
-55 to + 150
Typ.
âââ
âââ
Max.
100
99
Units
V
A
W
W/°C
V
°C
Units
°C/W
sales@zpsemi.com
www.zpsemi.com
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