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DMP2123L Datasheet, PDF (1/2 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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DMP2123L
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
⢠Low RDS(ON):
⢠72 mΩ @VGS = -4.5V
⢠108 mΩ @VGS = -2.7V
⢠123 mΩ @VGS = -2.5V
⢠Low Input/Output Leakage
⢠Lead Free By Design/RoHS Compliant (Note 3)
⢠Qualified to AEC-Q101 Standards for High Reliability
⢠"Green" Device (Note 4)
Mechanical Data
⢠Case: SOT-23
⢠Case Material - Molded Plastic, âGreenâ Molding Compound.
UL Flammability Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020D
⢠Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
⢠Terminal Connections: See Diagram Below
⢠Weight: 0.008 grams (approximate)
SOT-23
Drain
D
Gate
TOP VIEW
Source
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous
Pulsed Drain Current (Note 2)
Body-Diode Continuous Current (Note 1)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
IS
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1); Steady-State
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t â¤10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
G
S
TOP VIEW
Value
-20
±12
-3.0
-2.4
-15
2.0
Value
1.4
90
-55 to +150
Unit
V
V
A
A
A
Unit
W
°C/W
°C
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