DMN3051L Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN3051L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V_(BR)DSS
30V
R_DS(ON)
38mΩ @ V_GS = -10V
64mΩ @ V_GS = -4.5V
I_D
T_A = 25°C
5.8A
4.5A
Description and Applications
This new generation MOSFET has been designed to minimize the
on-state resistance (R_DS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Load Switch
• DC-DC Converters
• Power management functions
SOT23
Drain
Features and Benefits
• Low On-Resistance:
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead-Free Finish; RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
D
Top View
Gate
Source
Equivalent Circuit
G
S
Top View
Ordering Information (Note 3)
Notes:
Part Number
DMN3051L-7
Case
SOT23
Packaging
3000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
Marking Information
3N5
3N5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
2008
V
Feb
2
2009
W
Mar
3
2010
X
Apr
4
2011
Y
2012
Z
2013
A
2014
B
May
Jun
5
6
Jul
Aug
Sep
7
8
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
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