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DMN3033LSN Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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DMN3033LSN
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
⢠Low Gate Charge
⢠Low RDS(ON):
⢠30 mΩ @VGS = 10V
⢠40 mΩ @VGS = 4.5V
⢠Low Input/Output Leakage
⢠Lead Free By Design/RoHS Compliant (Note 3)
⢠Qualified to AEC-Q101 Standards for High Reliability
⢠"Green" Device (Note 4)
Mechanical Data
⢠Case: SC-59
⢠Case Material - Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminals: Finish â Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
⢠Terminal Connections: See Diagram
⢠Weight: 0.014 grams (approximate)
SC-59
Top View
Drain
Gate
Source
Equivalent Circuit
D
G
S
Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous
Pulsed Drain Current (Note 2)
Body-Diode Continuous Current (Note 1)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
IS
Value
30
±20
6
5
24
2.25
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1) t â¤10s
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t â¤10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
Value
1.4
90
-55 to +150
Unit
V
V
A
A
A
Unit
W
°C /W
°C
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