DMN2114SN Datasheet, PDF (1/1 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2114SN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Power Circuits
• Lead Free By Design/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• ESD Protected Gate
• "Green" Device (Note 3)
Mechanical Data
• Case: SC59
• Case Material - Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.014 grams (approximate)
SC-59
Drain
D
ESD protected
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Characteristic
Continuous
Continuous
Pulsed
Gate
Gate
Protection
Diode
Source
Internal Schematic
G
S
TOP VIEW
Symbol
V_DSS
V_GSS
I_D
Value
20
±12
1.2
4.0
Unit
V
V
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
500
250
-55 to +150
Unit
mW
°C /W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
@ T_j = 25°C
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Notes: 1. Pulse width ≤300μS, duty cycle ≤2%.
2. No purposefully added lead.
Symbol
BV_DSS
I_DSS
I_GSS
V_GS(th)
R_{DS (ON)}
|Y_fs|
V_SD
C_iss
C_oss
C_rss
t_D(ON)
t_D(OFF)
t_r
t_f
Min Typ
20
⎯
⎯
⎯
⎯
⎯
0.7 ⎯
⎯
⎯
⎯
⎯
⎯ 3.3
⎯ 0.8
⎯ 180
⎯ 120
⎯
45
⎯
10
⎯
50
⎯
15
⎯
45
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Max
⎯
10
±10
1.40
0.100
0.160
⎯
1.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
μA
μA
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
Test Condition
V_GS = 0V, I_D = 250μA
V_DS = 24V, V_GS = 0V
V_GS = ±12V, V_DS = 0V
V_DS = 10V, I_D = 1.0mA
V_GS = 4.5V, I_D = 0.5A
V_GS = 2.5V, I_D = 0.5A
V_DS = 10V, I_D = 0.5A
V_GS = 0V, I_S = 1.0A
V_DS = 10V, V_GS = 0V,
f = 1.0MHz
V_DD = 10V, I_D = 0.5A,
V_GS = 5.0V, R_GEN = 50Ω
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