DMN2050L Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2050L
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• 29mΩ @V_GS = 4.5V
• 50mΩ @V_GS = 2.5V
• 100mΩ @V_GS = 2.0V
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead, Halogen and Antimony Free, RoHS Compliant
• "Green" Device (Notes 2, 3 and 6)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
SOT-23 _Drain
D
Gate
TOP VIEW
Source
Equivalent Circuit
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
Symbol
V_DSS
V_GSS
I_D
I_DM
G
S
TOP VIEW
Value
20
±12
5.9
21
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Notes:
1. Device mounted on FR-4 PCB, on 2oz Copper pad layout with R_θJA = 90°C/W.
2. No purposefully added lead. Halogen and Antimony Free.
3. Repetitive rating, pulse width limited by junction temperature.
Value
1.4
90
-55 to +150
Units
W
°C/W
°C
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