DMN2020LSN Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2020LSN
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Up To 2KV
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SC-59
• Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.014 grams (approximate)
ESD PROTECTED TO 2kV
TOP VIEW
SC-59
Drain
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
D
G
S
TOP VIEW
Pin Out Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Steady
State
Pulsed Drain Current (Note 4)
Continuous
T_A = 25°C
T_A = 85°C
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
20
±12
6.9
4.5
30
Units
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T_A = 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Notes:
1. No purposefully added lead.
2. Device mounted on FR-4 PCB, with minimum recommended pad layout.
3. Repetitive rating, pulse width limited by junction temperature.
Value
0.61
204
-55 to +150
Units
W
°C /W
°C
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