CJZM718 Datasheet, PDF (1/5 Pages) ZP Semiconductor – DFNWB3×2-8L-G Plastic-Encapsulate Transistors-MOSFETS

CJZM718
DFNWB3×2-8L-G Plastic-Encapsulate Transistors-MOSFETS
CJZM718 PNP Transistor and N-ch MOSFET
DFNWB3×2-8L-G
DESCRIPTIONS
The CJZM718 is Integrated a 20V N-ch MOSFET with low
on-state resistance, and an independently connected PNP transistor
with low collector-to-emitter saturation voltage. This device is
suitable for use in charging circuit and other power management.
FEATURES
 High DC current gain
 Low Threshold
 Small package DFNWB3x2-8L-G
 Including a CJP718 transistor and a CJ1012 MOSFET independently in a package
APPLICATIONS
 Charging circuit
 Other power management in portable equipments
MARKING:
front
back
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
PNP Transistor
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
N-MOSFET
V_DS
V_GS
I_D
I_DM
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
Drain Current - Pulse
Power Dissipation, Temperature and Thermal Resistance
P_D
Power Dissipation
Thermal Resistance from Junction to Ambient (note1)
R_θJA
Thermal Resistance from Junction to Ambient (note2)
T_j
Junction Temperature
T_stg
Storage Temperature
Value
-25
-25
-7.5
-3
20
±6
0.5
2
1
175
110
150
-55~+150
[e-mail]
www.zpsemi.com
Unit
V
V
V
A
V
V
A
A
W
℃/W
℃/W
℃
℃
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