CJU05N60 Datasheet, PDF (1/2 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJU05N60
TO-252-2L Plastic-Encapsulate MOSFETS
CJU05N60 N-CHANNEL POWER MOSFET
DESCRIPTION
This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode with fast
recovery time.
Designed for high voltage, high speed switching applications
such as power suplies, converters, power motor controls and bridge
circuits.
FEATURES
z Low R_DS(on)
z Lower Capacitances
z Lower Total Gate Charge
z Tighter V_SD Specifications
z Avalanche Energy Specified
TO-252-2L
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation (note 2,T_a=25℃)
Maximum Power Dissipation (note 3,T_c=25℃)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
V_DS
V_GS
I_D
E_AS
P_D
R_θJA
T_J
T_stg
Value
600
±30
4.5
250
1.25
120
100
150
-50 ~+150
Unit
V
A
mJ
W
℃/W
℃
[e-mail]
www.zpsemi.com
1 of 2