CJU01N60 Datasheet, PDF (1/2 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJU01N60
TO-252-2L Plastic-Encapsulate MOSFETS
CJU01N60 N-Channel Power MOSFET
General Description
TO-252-2L
The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking capability without degrading
performance over time. In addition , this advanced MOSFET is designed 1. GATE
to withstand high energy in avalanche and commutation modes . The
2. DRAIN
new energy efficient design also offers a drain-to-source diode with a
3. SOURCE
1
fast recovery time. Designed for high voltage, high speed switching
applications in power suppliers, converters and PWM motor controls ,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
FEATURES
z Robust High Voltage Termination
z Avalanche Energy Specified
z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
z Diode is Characterized for Use in Bridge Circuits
z I_DSS and V_DS(on) Specified at Elevated Temperature
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Power Dissipation
P_D
Single Pulsed Avalanche Energy*
E_AS
Thermal Resistance from Junction to Ambient
R_thJA
Junction Temperature
T_J
Storage Temperature
T_stg
*E_AS condition: T_j=25℃,V_DD=100V,V_GS=10V,L=10mH,IAS=2A,R_G=25Ω
Value
600
±30
1
9
1.25
20
100
150
-50 ~+150
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Units
V
A
W
mJ
℃/W
℃
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