CJS8804 Datasheet, PDF (1/3 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJS8804
TSSOP8 Plastic-Encapsulate MOSFETS
CJS8804 Dual N-Channel MOSFET
TSSOP8
DESCRIPTION
The CJS8804 use advanced trench technology to provide excellent
R_DS(ON) and low gate charge. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,facilitated by its
common-drain configuration.
MARKING:
D1/D2 S2 S2 G2
8 7 ⁶⁵
1 ₂ 34
D1/D2 S1 S1 G1
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM *
Thermal Resistance from Junction to Ambient
R_θJA
Junction Temperature
T_j
Storage Temperature
T_stg
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
T_L
* Repetitive rating : Pulse width limited by junction temperature.
Value
20
±12
8
30
125
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
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