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CJS6562 Datasheet, PDF (1/4 Pages) ZP Semiconductor – Plastic-Encapsulate Transistors | |||
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CJS6562
TSSOP-8 Plastic-Encapsulate Transistors
CJS6562 N- and P-Channel 2.5-V(G-S) MOSFET
Equivalent circuit
TSSOP-8
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150â)a
Ta=25â
Ta=70â
Pulsed Drain Current
Continuous Source Current(Diode Conduction)a
Power Dissipation a
Maximum Junction-to-Ambienta
Ta=25â
Ta=70â
Operating Junction and Storage Temperature
Notes :
a. Surface Mounted on FR4 board, tâ¤10S
Symbol
VDS
VGS
ID
IDM
IS
PD
RthJA
TJ, Tstg
N-Channel
20
±12
4.5
3.6
30
1.25
P-Channel
-20
±12
-3.5
-2.7
-30
-1.25
1.0
0.64
125
-55 ~150
Unit
V
A
W
â/W
â
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