CJQ9926 Datasheet, PDF (1/3 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJQ9926
SOP8 Plastic-Encapsulate MOSFETS
CJQ9926 Dual N-Channel MOSFET
FEATURE
z Advanced trench process technology
z High density cell design for ultra low on-resistance
z High power and current handing capability
z Ideal for Liion battery pack applications
MARKING: Q9926
SOP8
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source voltage
Gate-Source Voltage
Continuous Drain Current *
Pulsed Drain Current
Power Dissipation *
Thermal Resistance from Junction to Ambient *
Junction Temperature
Storage Temperature
* Surface Mounted on 1” x 1” FR4 Board.
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_stg
Value
20
±12
4.8
30
1.25
100
150
-55~+150
Unit
V
V
A
A
W
℃/ W
℃
℃
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