CJQ7328 Datasheet, PDF (1/3 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJQ7328
SOP8 Plastic-Encapsulate MOSFETS
CJQ7328 Dual P-Channel MOSFET
DESCRIPTION
The CJQ7328 uses advanced processing techniques to achieve
extremely low on-resistance. This benefit, combined with the
ruggedized device design that the MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device
for use in battery and load management.
SOP8
FEATURES
Ultra Low On-Resistance
Maximum ratings (T_a=25℃ unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_stg
Value
-30
±20
-8
-32
1.4
89
150
-55 ~+150
Unit
V
A
W
℃/W
℃
[e-mail]
www.zpsemi.com
1 of 3