CJQ4459 Datasheet, PDF (1/3 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJQ4459
SOP8 Plastic-Encapsulate MOSFETS
CJQ4459 P-Channel MOSFET
DESCRIPTION
The CJQ4459 combines advanced trench MOSFET technology with a
low resistance package to provide extremely low R_DS(ON). This device is ideal
for load switch and battery protection applications.
SOP8
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient (t ≤10s) (note 3)
Avalanche Current (note 1)
Repetitive energy L=0.1mH (note 1)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
I_AR,I_AS
E_AR,E_AS
T_J
T_STG
Value
-30
±20
-6.5
-30
1.25
100
17
14
150
-55~ 150
Units
V
V
A
A
W
℃/W
A
mJ
℃
℃
[e-mail]
www.zpsemi.com
1 of 3